IPW50R250CPFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Published :

2008

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

114W Tc

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

31A

Vgs(th) (Max) @ Id :

3.5V @ 520µA

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

250m Ω @ 7.8A, 10V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™

DS Breakdown Voltage-Min :

500V

Package / Case :

TO-247-3

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

345 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1420pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

500V

Pin Count :

3

ECCN Code :

EAR99

Surface Mount :

No

Factory Lead Time :

52 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-247AD

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

13A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.25Ohm

Transistor Application :

SWITCHING

Pbfree Code :

yes

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Mounting Type :

Through Hole

Number of Terminations :

3