IPSA70R950CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

94W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Factory Lead Time :

18 Weeks

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-251-3 Stub Leads, IPak

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

15.3nC @ 10V

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

12A

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Transistor Element Material :

SILICON

Packaging :

Tube

Drain to Source Voltage (Vdss) :

700V

Case Connection :

DRAIN

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

50 mJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.95Ohm

DS Breakdown Voltage-Min :

700V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

328pF @ 100V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2013

Number of Terminations :

3