IPSA70R2K0CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Avalanche Energy Rating (Eas) :

11 mJ

Drain-source On Resistance-Max :

2Ohm

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

700V

JESD-30 Code :

R-PSIP-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

4A Tc

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

163pF @ 100V

Pulsed Drain Current-Max (IDM) :

6.3A

JESD-609 Code :

e3

Vgs (Max) :

±20V

Factory Lead Time :

18 Weeks

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.5V @ 70μA

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

FET Type :

N-Channel

Number of Elements :

1

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

42W Tc

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 10V

DS Breakdown Voltage-Min :

700V

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN