IPSA70R600CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Number of Elements :

1

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Avalanche Energy Rating (Eas) :

55 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

18A

Drain-source On Resistance-Max :

0.6Ohm

ECCN Code :

EAR99

Terminal Position :

Single

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

700V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Factory Lead Time :

18 Weeks

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

700V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Power Dissipation-Max :

86W Tc

Input Capacitance (Ciss) (Max) @ Vds :

474pF @ 100V

Rds On (Max) @ Id, Vgs :

600m Ω @ 1A, 10V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel