IPSA70R2K0P7SAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

3A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

17.6W Tc

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Pulsed Drain Current-Max (IDM) :

5.7A

Terminal Position :

Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

130pF @ 400V

JESD-30 Code :

R-PSIP-T3

Drain to Source Voltage (Vdss) :

700V

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

3.5V @ 30μA

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Published :

2014

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±16V

Factory Lead Time :

18 Weeks

Terminal Finish :

Tin (Sn)

Package / Case :

TO-251-3 Stub Leads, IPak

DS Breakdown Voltage-Min :

700V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™ P7

Case Connection :

DRAIN

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 400V

Mounting Type :

Through Hole

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

JESD-609 Code :

e3

Drain-source On Resistance-Max :

2Ohm