IPSA70R360P7SAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 150μA

FET Type :

N-Channel

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

360m Ω @ 3A, 10V

Drain to Source Voltage (Vdss) :

700V

Current - Continuous Drain (Id) @ 25°C :

12.5A Tc

Surface Mount :

No

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

34A

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Series :

CoolMOS™ P7

Drain-source On Resistance-Max :

0.36ohm

Power Dissipation-Max :

59.5W Tc

Transistor Application :

SWITCHING

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Input Capacitance (Ciss) (Max) @ Vds :

517pF @ 400V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-40°C~150°C TJ

DS Breakdown Voltage-Min :

700V

Vgs (Max) :

±16V

Terminal Position :

Single

Case Connection :

DRAIN

Published :

2014

Gate Charge (Qg) (Max) @ Vgs :

16.4nC @ 400V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED