IPN80R900P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-G3

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 500V

Package / Case :

TO-261-3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Published :

2014

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

7W Tc

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs(th) (Max) @ Id :

3.5V @ 110μA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.9Ohm

Series :

CoolMOS™ P7

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

800V

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

FET Type :

N-Channel

Case Connection :

DRAIN

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

800V

Terminal Form :

Gull wing