IPN80R750P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 140μA

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

750m Ω @ 2.7A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™ P7

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Drain-source On Resistance-Max :

0.75Ohm

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

800V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

Package / Case :

TO-261-3

Published :

2014

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Application :

SWITCHING

FET Type :

N-Channel

DS Breakdown Voltage-Min :

800V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

Surface Mount :

yes

Number of Elements :

1

Power Dissipation-Max :

7.2W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3