IPN80R2K0P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 500V

JESD-30 Code :

R-PDSO-G3

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3.5V @ 50μA

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

2Ohm

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Drain to Source Voltage (Vdss) :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Series :

CoolMOS™ P7

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

TO-261-3

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

800V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

2 Ω @ 940mA, 10V

ECCN Code :

EAR99

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

6W Tc

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Published :

2014

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

FET Type :

N-Channel

Reach Compliance Code :

not_compliant