IPN80R2K4P7

Manufacturer :

Infineon Technologies

Product Category :

Specialized ICs

DS Breakdown Voltage-Min :

800V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 800mA, 10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 500V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 40μA

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Package / Case :

TO-261-3

Series :

CoolMOS™ P7

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

6.3W Tc

Factory Lead Time :

18 Weeks

Surface Mount :

yes

Published :

2014

JESD-30 Code :

R-PDSO-G3

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99