IPN80R1K2P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Published :

2014

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-261-3

Number of Elements :

1

DS Breakdown Voltage-Min :

800V

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.7A, 10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 500V

Series :

CoolMOS™ P7

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

6.8W Tc

JESD-30 Code :

R-PDSO-G3

Vgs(th) (Max) @ Id :

3.5V @ 80μA

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V