IPI90R800C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Pulsed Drain Current-Max (IDM) :

15A

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

900V

Vgs(th) (Max) @ Id :

3.5V @ 460μA

DS Breakdown Voltage-Min :

900V

Surface Mount :

No

Published :

2008

Avalanche Energy Rating (Eas) :

157 mJ

Current - Continuous Drain (Id) @ 25°C :

6.9A Tc

Drain Current-Max (Abs) (ID) :

6.9A

Vgs (Max) :

±20V

Power Dissipation-Max :

104W Tc

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Transistor Element Material :

SILICON

Pin Count :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Packaging :

Tube

Mounting Type :

Through Hole

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Qualification Status :

Not Qualified

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.8Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V