IPI90N06S4L04AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±16V

Case Connection :

DRAIN

Pbfree Code :

yes

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Published :

2009

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.2V @ 90μA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

90A

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Max Dual Supply Voltage :

60V

Mount :

Through Hole

Power Dissipation-Max :

150W Tc

JESD-609 Code :

e3

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Operating Mode :

ENHANCEMENT MODE

Halogen Free :

Halogen Free

Packaging :

Tube

Number of Pins :

3