IPI90N04S402AKSA1
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- Mfr.Part #
- IPI90N04S402AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 90A TO262-3
- Stock
- 7,307
- In Stock ：
- 7,307
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 23 ns
- Drain-source On Resistance-Max :
- 0.0025Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 90A, 10V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 90A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 95µA
- Turn-Off Delay Time :
- 27 ns
- Rise Time :
- 13ns
- Halogen Free :
- Halogen Free
- Published :
- 2010
- Number of Pins :
- 3
- Terminal Position :
- Single
- Lead Free :
- Contains Lead
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 150W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 26 ns
- Series :
- OptiMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 9430pF @ 25V
- Avalanche Energy Rating (Eas) :
- 475 mJ
- Max Dual Supply Voltage :
- 40V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 16 Weeks
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Datasheets
- IPI90N04S402AKSA1
N-Channel Tube 2.5m Ω @ 90A, 10V ±20V 9430pF @ 25V 118nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI90N04S402AKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 475 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 9430pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 90A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 27 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 40V.Using drive voltage (10V) reduces this device's overall power consumption.
IPI90N04S402AKSA1 Features
the avalanche energy rating (Eas) is 475 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 27 ns
IPI90N04S402AKSA1 Applications
There are a lot of Infineon Technologies
IPI90N04S402AKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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