IPI90R1K0C3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

3 V

Rise Time :

20 ns

Package :

Bulk

Element Configuration :

Single

Drain to Source Resistance :

1 Ω

Rds On Max :

1 Ω

Dual Supply Voltage :

900 V

Max Power Dissipation :

89 W

Technology :

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) :

900 V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

5.7 A

Number of Pins :

3

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

850 pF @ 100 V

Power Dissipation :

89 W

FET Type :

N-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 370µA

RoHS :

Compliant

Product Status :

Obsolete

Termination :

Through Hole

Rds On (Max) @ Id, Vgs :

1Ohm @ 3.3A, 10V

Power Dissipation (Max) :

89W (Tc)

Max Operating Temperature :

150 °C

Turn-Off Delay Time :

400 ns

Gate to Source Voltage (Vgs) :

20 V

Drain to Source Breakdown Voltage :

900 V

Halogen Free :

Halogen Free

Series :

CoolMOS™

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Min Operating Temperature :

-55 °C

Input Capacitance :

850 pF

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

5.7A (Tc)

Supplier Device Package :

PG-TO262-3

Mounting Type :

Through Hole