IPD26N06S2L35ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

55V

Power Dissipation-Max :

68W Tc

Series :

OptiMOS™

Terminal Position :

Single

Number of Terminations :

2

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reference Standard :

AEC-Q101

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

35m Ω @ 13A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

621pF @ 25V

Continuous Drain Current (ID) :

30A

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

120A

Current - Continuous Drain (Id) @ 25°C :

30A Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Published :

2006

Vgs(th) (Max) @ Id :

2V @ 26μA

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Factory Lead Time :

10 Weeks

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.047Ohm

Case Connection :

DRAIN

Additional Feature :

ULTRA LOW RESISTANCE

Avalanche Energy Rating (Eas) :

80 mJ

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant