IPD22N08S2L50ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

94 mJ

Additional Feature :

ULTRA LOW RESISTANCE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Max Dual Supply Voltage :

75V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

27A

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

108A

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 25V

Number of Elements :

1

Lead Free :

Contains Lead

Terminal Position :

Single

Power Dissipation-Max :

75W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.065Ohm

Case Connection :

DRAIN

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

10 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Published :

2006

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Number of Terminations :

2

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 31μA

Reference Standard :

AEC-Q101

FET Type :

N-Channel

Halogen Free :

Halogen Free

Rds On (Max) @ Id, Vgs :

50m Ω @ 50A, 10V