IPD25CN10NGATMA1
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- Mfr.Part #
- IPD25CN10NGATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 35A TO252-3
- Stock
- 3,412
- In Stock ：
- 3,412
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 71W
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Series :
- OptiMOS™
- Vgs(th) (Max) @ Id :
- 4V @ 39μA
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Rise Time :
- 4ns
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 35A
- Turn On Delay Time :
- 10 ns
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 71W Tc
- Drain-source On Resistance-Max :
- 0.025Ohm
- Turn-Off Delay Time :
- 13 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 35A, 10V
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Max Dual Supply Voltage :
- 100V
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2070pF @ 50V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Factory Lead Time :
- 18 Weeks
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 140A
- Published :
- 2008
- Fall Time (Typ) :
- 3 ns
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Datasheets
- IPD25CN10NGATMA1
N-Channel Tape & Reel (TR) 25m Ω @ 35A, 10V ±20V 2070pF @ 50V 31nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD25CN10NGATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 65 mJ.The maximum input capacitance of this device is 2070pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 35A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 13 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 140A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 100V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPD25CN10NGATMA1 Features
the avalanche energy rating (Eas) is 65 mJ
a continuous drain current (ID) of 35A
the turn-off delay time is 13 ns
based on its rated peak drain current 140A.
IPD25CN10NGATMA1 Applications
There are a lot of Infineon Technologies
IPD25CN10NGATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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