IPD25CN10NGBUMA1
- Mfr.Part #
- IPD25CN10NGBUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 35A TO252-3
- Stock
- 41,368
- In Stock :
- 41,368
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 65 mJ
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 35A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 39μA
- Drain to Source Voltage (Vdss) :
- 100V
- Published :
- 2011
- Series :
- OptiMOS™
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2070pF @ 50V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- Pbfree Code :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- FET Type :
- N-Channel
- Pin Count :
- 4
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.025Ohm
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 100V
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 71W Tc
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 140A
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Reach Compliance Code :
- Compliant
- Drain Current-Max (Abs) (ID) :
- 35A
- Datasheets
- IPD25CN10NGBUMA1
IPD25CN10NGBUMA1 Documents

N-Channel Tape & Reel (TR) 25m Ω @ 35A, 10V ±20V 2070pF @ 50V 31nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD25CN10NGBUMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 65 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2070pF @ 50V.The drain current is the maximum continuous current this device can conduct, which is 35A.Pulsed drain current is maximum rated peak drain current 140A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD25CN10NGBUMA1 Features
the avalanche energy rating (Eas) is 65 mJ
based on its rated peak drain current 140A.
a 100V drain to source voltage (Vdss)
IPD25CN10NGBUMA1 Applications
There are a lot of Infineon Technologies
IPD25CN10NGBUMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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