IPD25CN10NGBUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

65 mJ

Mounting Type :

Surface Mount

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

25m Ω @ 35A, 10V

Vgs(th) (Max) @ Id :

4V @ 39μA

Drain to Source Voltage (Vdss) :

100V

Published :

2011

Series :

OptiMOS™

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

35A Tc

FET Type :

N-Channel

Pin Count :

4

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Number of Terminations :

2

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.025Ohm

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Terminal Form :

Gull wing

Power Dissipation-Max :

71W Tc

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

140A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

35A