IPD25CN10NGBUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 50V

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

65 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 39μA

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Rds On (Max) @ Id, Vgs :

25m Ω @ 35A, 10V

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Pin Count :

4

Published :

2011

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.025Ohm

FET Type :

N-Channel

Reach Compliance Code :

Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

71W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

No

Transistor Element Material :

SILICON

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

35A

Pulsed Drain Current-Max (IDM) :

140A