IPD220N06L3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

22m Ω @ 30A, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Vgs (Max) :

±20V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

60V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Qualification Status :

Not Qualified

Pin Count :

4

Vgs(th) (Max) @ Id :

2.2V @ 11µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

36W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 30V

Pulsed Drain Current-Max (IDM) :

120A

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

Series :

OptiMOS™

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

30A

Terminal Form :

Gull wing

Number of Elements :

1

Turn On Delay Time :

9 ns

Rise Time :

3ns

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.022Ohm

Power Dissipation :

36W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

Turn-Off Delay Time :

19 ns

Transistor Element Material :

SILICON

Published :

2011

Transistor Application :

SWITCHING

Surface Mount :

yes