IPD220N06L3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Drain-source On Resistance-Max :

0.022Ohm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

FET Type :

N-Channel

Surface Mount :

yes

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

22m Ω @ 30A, 10V

Number of Terminations :

2

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

120A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 30V

Number of Pins :

3

JESD-609 Code :

e3

Continuous Drain Current (ID) :

30A

Reach Compliance Code :

not_compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

36W Tc

Factory Lead Time :

18 Weeks

Contact Plating :

Tin

Series :

OptiMOS™

Power Dissipation :

36W

Turn-Off Delay Time :

19 ns

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rise Time :

3ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Element Configuration :

Single

Turn On Delay Time :

9 ns

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Published :

2011

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2.2V @ 11µA