IPD220N06L3GBTMA1

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Mfr.Part #
IPD220N06L3GBTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 30A TO252-3
Stock
9,494
In Stock :
9,494

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
36W Tc
JEDEC-95 Code :
TO-252AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
120A
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Transistor Element Material :
SILICON
Power Dissipation :
36W
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Published :
2011
Turn-Off Delay Time :
19 ns
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 4.5V
Case Connection :
DRAIN
Terminal Form :
Gull wing
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
22m Ω @ 30A, 10V
Number of Terminations :
2
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.022Ohm
Pin Count :
4
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
9 ns
Pbfree Code :
No
Gate to Source Voltage (Vgs) :
20V
JESD-30 Code :
R-PSSO-G2
Surface Mount :
yes
Additional Feature :
LOGIC LEVEL COMPATIBLE
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 30V
FET Type :
N-Channel
Mounting Type :
Surface Mount
Number of Elements :
1
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.2V @ 11µA
Contact Plating :
Tin
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Factory Lead Time :
18 Weeks
Drain to Source Breakdown Voltage :
60V
Element Configuration :
Single
Continuous Drain Current (ID) :
30A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
3ns
Series :
OptiMOS™
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD220N06L3GBTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, IPD220N06L3GBTMA1 pinout, IPD220N06L3GBTMA1 datasheet PDF, IPD220N06L3GBTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD220N06L3GBTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD220N06L3GBTMA1


N-Channel Tape & Reel (TR) 22m Ω @ 30A, 10V ±20V 1600pF @ 30V 10nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD220N06L3GBTMA1 Description


IPD220N06L3GBTMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of the IPD220N06L3GBTMA1 is -55°C~175°C TJ and its maximum power dissipation is 36W Tc. IPD220N06L3GBTMA1 has 4 pins and it is available in Tape&Reel packaging way.



IPD220N06L3GBTMA1 Features


  • Continuous Drain Current (ID): 30A

  • Gate to Source Voltage (Vgs): 20V

  • Drain to Source Breakdown Voltage: 60V

  • Vgs(th) (Max) @ Id: 2.2V @ 11μA



IPD220N06L3GBTMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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