IPD220N06L3GBTMA1
- Mfr.Part #
- IPD220N06L3GBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A TO252-3
- Stock
- 9,494
- In Stock :
- 9,494
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 36W Tc
- JEDEC-95 Code :
- TO-252AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 120A
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 36W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2011
- Turn-Off Delay Time :
- 19 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 30A, 10V
- Number of Terminations :
- 2
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.022Ohm
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 9 ns
- Pbfree Code :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 30V
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.2V @ 11µA
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 18 Weeks
- Drain to Source Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 30A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 3ns
- Series :
- OptiMOS™
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Datasheets
- IPD220N06L3GBTMA1
IPD220N06L3GBTMA1 Documents

N-Channel Tape & Reel (TR) 22m Ω @ 30A, 10V ±20V 1600pF @ 30V 10nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD220N06L3GBTMA1 Description
IPD220N06L3GBTMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 60V. The operating temperature of the IPD220N06L3GBTMA1 is -55°C~175°C TJ and its maximum power dissipation is 36W Tc. IPD220N06L3GBTMA1 has 4 pins and it is available in Tape&Reel packaging way.
IPD220N06L3GBTMA1 Features
-
Continuous Drain Current (ID): 30A
-
Gate to Source Voltage (Vgs): 20V
-
Drain to Source Breakdown Voltage: 60V
-
Vgs(th) (Max) @ Id: 2.2V @ 11μA
IPD220N06L3GBTMA1 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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