IPD20N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

15 mJ

Rds On (Max) @ Id, Vgs :

20m Ω @ 15A, 10V

Reach Compliance Code :

Compliant

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

695pF @ 25V

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Drain-source On Resistance-Max :

0.031Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Published :

2001

Terminal Position :

Single

Case Connection :

DRAIN

Number of Terminations :

2

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

42W Tc

Drain Current-Max (Abs) (ID) :

30A

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 25μA

Pulsed Drain Current-Max (IDM) :

120A