IPD25N06S240ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

29A

Series :

OptiMOS™

Case Connection :

DRAIN

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.04Ohm

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

513pF @ 25V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 26μA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

40m Ω @ 13A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2006

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

68W Tc

Avalanche Energy Rating (Eas) :

80 mJ

Pulsed Drain Current-Max (IDM) :

116A

FET Type :

N-Channel

Factory Lead Time :

10 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE