IPD25N06S2-40ATMA1
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- Mfr.Part #
- IPD25N06S2-40ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IPD25N06 - 55V-60V N-CHANNEL AUT
- Stock
- 12,905
- In Stock ：
- 12,905
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 513pF @ 25V
- Turn-Off Delay Time :
- 18 ns
- Max Dual Supply Voltage :
- 55V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.04Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Power Dissipation-Max :
- 68W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 13A, 10V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 26μA
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Number of Elements :
- 1
- Turn On Delay Time :
- 8 ns
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 20ns
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Case Connection :
- DRAIN
- Series :
- OptiMOS™
- Pulsed Drain Current-Max (IDM) :
- 116A
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Halogen Free :
- Halogen Free
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Fall Time (Typ) :
- 19 ns
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 29A
- Datasheets
- IPD25N06S2-40ATMA1
N-Channel Tape & Reel (TR) 40m Ω @ 13A, 10V ±20V 513pF @ 25V 18nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD25N06S240ATMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 513pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 29A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 116A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 55V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPD25N06S240ATMA1 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 29A
the turn-off delay time is 18 ns
based on its rated peak drain current 116A.
IPD25N06S240ATMA1 Applications
There are a lot of Infineon Technologies
IPD25N06S240ATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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