IPD25N06S2-40ATMA1
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- Mfr.Part #
- IPD25N06S2-40ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IPD25N06 - 55V-60V N-CHANNEL AUT
- Stock
- 12,905
- In Stock ：
- 12,905
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 18 ns
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 13A, 10V
- Published :
- 2006
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Lead Free :
- Contains Lead
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 19 ns
- Vgs(th) (Max) @ Id :
- 4V @ 26μA
- Pulsed Drain Current-Max (IDM) :
- 116A
- Input Capacitance (Ciss) (Max) @ Vds :
- 513pF @ 25V
- Radiation Hardening :
- No
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Continuous Drain Current (ID) :
- 29A
- Drain-source On Resistance-Max :
- 0.04Ohm
- Series :
- OptiMOS™
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Power Dissipation-Max :
- 68W Tc
- Rise Time :
- 20ns
- JESD-30 Code :
- R-PSSO-G2
- Turn On Delay Time :
- 8 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 55V
- Datasheets
- IPD25N06S2-40ATMA1
N-Channel Tape & Reel (TR) 40m Ω @ 13A, 10V ±20V 513pF @ 25V 18nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD25N06S240ATMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 80 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 513pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 29A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 116A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 55V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPD25N06S240ATMA1 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 29A
the turn-off delay time is 18 ns
based on its rated peak drain current 116A.
IPD25N06S240ATMA1 Applications
There are a lot of Infineon Technologies
IPD25N06S240ATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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