IPB65R600C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

FET Type :

N-Channel

DS Breakdown Voltage-Min :

650V

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Pulsed Drain Current-Max (IDM) :

18A

Pbfree Code :

No

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Power Dissipation-Max :

63W Tc

Published :

2008

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Drain-source On Resistance-Max :

0.6Ohm

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

142 mJ

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

650V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2