IPAN70R600P7SXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

CoolMOS™ P7

Rds On (Max) @ Id, Vgs :

600m Ω @ 1.8A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

Operating Temperature :

-40°C~150°C TJ

Power Dissipation-Max :

24.9W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Transistor Application :

SWITCHING

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

Not Applicable

Published :

2014

FET Type :

N-Channel

DS Breakdown Voltage-Min :

700V

Pulsed Drain Current-Max (IDM) :

20.5A

Drain to Source Voltage (Vdss) :

700V

Case Connection :

Isolated

Package / Case :

TO-220-3 Full Pack

Drain-source On Resistance-Max :

0.6Ohm

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

Input Capacitance (Ciss) (Max) @ Vds :

364pF @ 400V

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single