IPAN60R650CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.4A, 10V

Number of Terminations :

3

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Continuous Drain Current (ID) :

9.9A

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSFM-T3

Surface Mount :

No

Operating Temperature :

-40°C~150°C TJ

DS Breakdown Voltage-Min :

600V

Case Connection :

Isolated

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

Not Applicable

Power Dissipation-Max :

28W Tc

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

FET Feature :

Super Junction

Package / Case :

TO-220-3 Full Pack

JESD-609 Code :

e3

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

19A

Avalanche Energy Rating (Eas) :

133 mJ

Current - Continuous Drain (Id) @ 25°C :

9.9A Tc

Drain-source On Resistance-Max :

0.65Ohm

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Elements :

1