IPAN60R125PFD7SXKSA1
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- Mfr.Part #
- IPAN60R125PFD7SXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 25A TO220
- Stock
- 100
- In Stock ：
- 100
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -40°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1503pF @ 400V
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 32W Tc
- Drain to Source Voltage (Vdss) :
- 650V
- Series :
- CoolMOS™PFD7
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Vgs(th) (Max) @ Id :
- 4.5V @ 390μA
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 7.8A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±20V
- Datasheets
- IPAN60R125PFD7SXKSA1
N-Channel 125m Ω @ 7.8A, 10V ±20V 1503pF @ 400V 36nC @ 10V 650V TO-220-3 Full Pack
IPAN60R125PFD7SXKSA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1503pF @ 400V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.
IPAN60R125PFD7SXKSA1 Features
a 650V drain to source voltage (Vdss)
IPAN60R125PFD7SXKSA1 Applications
There are a lot of Infineon Technologies
IPAN60R125PFD7SXKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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