IPAN65R650CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

18A

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Series :

CoolMOS™

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

650V

Operating Temperature :

-40°C~150°C TJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

10.1A Tc

DS Breakdown Voltage-Min :

650V

Drain-source On Resistance-Max :

0.65Ohm

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Factory Lead Time :

18 Weeks

Terminal Finish :

Tin (Sn)

FET Feature :

Super Junction

Transistor Element Material :

SILICON

Case Connection :

Isolated

FET Type :

N-Channel

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Terminal Position :

Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

142 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.1A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

28W Tc

Continuous Drain Current (ID) :

10.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Pbfree Code :

yes

Mount :

Through Hole

Number of Terminations :

3