IPAN50R500CEXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

Gate Charge (Qg) (Max) @ Vgs :

18.7nC @ 10V

Published :

2013

Continuous Drain Current (ID) :

11.1A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

500m Ω @ 2.3A, 13V

Input Capacitance (Ciss) (Max) @ Vds :

433pF @ 100V

Pulsed Drain Current-Max (IDM) :

24A

Terminal Position :

Single

Number of Terminations :

3

Number of Elements :

1

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

13V

JESD-30 Code :

R-PSFM-T3

Series :

CoolMOS™

Drain-source On Resistance-Max :

0.5Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Power Dissipation-Max :

28W Tc

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Drain to Source Voltage (Vdss) :

500V

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

129 mJ

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±20V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

11.1A Tc

Operating Temperature :

-40°C~150°C TJ

DS Breakdown Voltage-Min :

500V

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Packaging :

Tube

Transistor Element Material :

SILICON