IPA90R800C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

157 mJ

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

900V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Series :

CoolMOS™

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.1A, 10V

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

15A

FET Type :

N-Channel

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

6.9A Tc

Published :

2005

Pbfree Code :

yes

Power Dissipation-Max :

33W Tc

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

DS Breakdown Voltage-Min :

900V

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 460μA

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Drain Current-Max (Abs) (ID) :

6.9A

Pin Count :

3

Drain-source On Resistance-Max :

0.8Ohm