IPA90R500C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

24A

Power Dissipation-Max :

34W Tc

Package / Case :

TO-220-3 Full Pack

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

900V

Qualification Status :

Not Qualified

Series :

CoolMOS™

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 740μA

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

388 mJ

Number of Terminations :

3

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.5Ohm

Transistor Application :

SWITCHING

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 100V

Drain Current-Max (Abs) (ID) :

11A

Rds On (Max) @ Id, Vgs :

500m Ω @ 6.6A, 10V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

JESD-609 Code :

e3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

DS Breakdown Voltage-Min :

900V

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)