IPA90R1K0C3XKSA1

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Mfr.Part #
IPA90R1K0C3XKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 900V 5.7A TO220-FP
Stock
30,175
In Stock :
30,175

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Nominal Vgs :
3 V
Avalanche Energy Rating (Eas) :
97 mJ
Series :
CoolMOS™
Case Connection :
Isolated
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
12A
Drive Voltage (Max Rds On,Min Rds On) :
10V
REACH SVHC :
No SVHC
Halogen Free :
Halogen Free
JEDEC-95 Code :
TO-220AB
Number of Terminations :
3
Pbfree Code :
yes
Pin Count :
3
Termination :
Through Hole
Power Dissipation-Max :
32W Tc
FET Type :
N-Channel
Continuous Drain Current (ID) :
5.7A
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Drain to Source Breakdown Voltage :
900V
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
1 Ω @ 3.3A, 10V
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Dual Supply Voltage :
900V
Surface Mount :
No
Drain-source On Resistance-Max :
1Ohm
Fall Time (Typ) :
35 ns
Turn On Delay Time :
70 ns
Input Capacitance (Ciss) (Max) @ Vds :
850pF @ 100V
Gate to Source Voltage (Vgs) :
20V
Vgs(th) (Max) @ Id :
3.5V @ 370µA
Mounting Type :
Through Hole
Element Configuration :
Single
Lead Free :
Lead Free
Rise Time :
20ns
Vgs (Max) :
±20V
Package / Case :
TO-220-3 Full Pack
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Published :
2008
Turn-Off Delay Time :
400 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
5.7A Tc
Power Dissipation :
32W
Terminal Finish :
Tin (Sn)
Datasheets
IPA90R1K0C3XKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPA90R1K0C3XKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, IPA90R1K0C3XKSA1 pinout, IPA90R1K0C3XKSA1 datasheet PDF, IPA90R1K0C3XKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPA90R1K0C3XKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPA90R1K0C3XKSA1


N-Channel Tube 1 Ω @ 3.3A, 10V ±20V 850pF @ 100V 34nC @ 10V TO-220-3 Full Pack

IPA90R1K0C3XKSA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 97 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 850pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.7A amps.In this device, the drain-source breakdown voltage is 900V and VGS=900V, so the drain-source breakdown voltage is 900V in this case.It is [400 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 12A.A turn-on delay time of 70 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPA90R1K0C3XKSA1 Features


the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 5.7A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 12A.


IPA90R1K0C3XKSA1 Applications


There are a lot of Infineon Technologies
IPA90R1K0C3XKSA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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