IPA90R1K2C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

ECCN Code :

EAR99

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

68 mJ

Transistor Application :

SWITCHING

Published :

2008

Package / Case :

TO-220-3 Full Pack

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pin Count :

3

Packaging :

Tube

Factory Lead Time :

29 Weeks

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Series :

CoolMOS™

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

10A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

3.5V @ 310μA

Drain to Source Voltage (Vdss) :

900V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Number of Terminations :

3

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

900V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

31W Tc

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

3.1A