IPA90R1K2C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

31W Tc

Number of Elements :

1

FET Type :

N-Channel

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

DS Breakdown Voltage-Min :

900V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Drain to Source Voltage (Vdss) :

900V

Number of Terminations :

3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Pbfree Code :

yes

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Published :

2008

Vgs (Max) :

±20V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

3.1A

JESD-30 Code :

R-PSFM-T3

Series :

CoolMOS™

Packaging :

Tube

Factory Lead Time :

29 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Vgs(th) (Max) @ Id :

3.5V @ 310μA

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Avalanche Energy Rating (Eas) :

68 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V