IPA90R1K2C3XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

900V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

ECCN Code :

EAR99

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Published :

2008

Transistor Application :

SWITCHING

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

3.5V @ 310μA

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Mounting Type :

Through Hole

Pbfree Code :

yes

DS Breakdown Voltage-Min :

900V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Surface Mount :

No

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Power Dissipation-Max :

31W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

68 mJ

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

10A

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

3.1A

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Factory Lead Time :

29 Weeks

Series :

CoolMOS™

Terminal Finish :

Tin (Sn)