IPA90R800C3
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- Mfr.Part #
- IPA90R800C3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 6.9A TO220
- Stock
- 66
- In Stock ：
- 66
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 70 ns
- Rise Time :
- 20ns
- Published :
- 2008
- Gate to Source Voltage (Vgs) :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 15A
- Qualification Status :
- Not Qualified
- Min Operating Temperature :
- -55°C
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 6 Weeks
- Voltage - Threshold :
- 3V
- Package / Case :
- TO-220-3
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Capacitance - Input :
- 1.1nF
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 32 ns
- Drain to Source Voltage (Vdss) :
- 900V
- Drain to Source Resistance :
- 800mOhm
- Avalanche Energy Rating (Eas) :
- 157 mJ
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- Isolated
- Turn-Off Delay Time :
- 400 ns
- Continuous Drain Current (ID) :
- 6.9A
- Power Dissipation :
- 33W
- Power Dissipation-Max :
- 33W
- Polarity/Channel Type :
- N-Channel
- Rds On Max :
- 800 mΩ
- Max Operating Temperature :
- 150°C
- Drain to Source Breakdown Voltage :
- 900V
- Halogen Free :
- Halogen Free
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Surface Mount :
- No
- Number of Pins :
- 3
- Number of Elements :
- 1
- Element Configuration :
- Single
- Datasheets
- IPA90R800C3
900V TO-220-3
IPA90R800C3 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 157 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 6.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 900V, and this device has a drainage-to-source breakdown voltage of 900VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 400 ns.Peak drain current is 15A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 800mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 70 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 900V is required between drain and source (Vdss).
IPA90R800C3 Features
the avalanche energy rating (Eas) is 157 mJ
a continuous drain current (ID) of 6.9A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 400 ns
based on its rated peak drain current 15A.
single MOSFETs transistor is 800mOhm
a 900V drain to source voltage (Vdss)
IPA90R800C3 Applications
There are a lot of Infineon
IPA90R800C3 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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