IPA086N10N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

10ns

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Fall Time (Typ) :

8 ns

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

37.5W Tc

Pbfree Code :

yes

Turn On Delay Time :

16 ns

Turn-Off Delay Time :

27 ns

Factory Lead Time :

13 Weeks

Rds On (Max) @ Id, Vgs :

8.6m Ω @ 45A, 10V

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0086Ohm

Series :

OptiMOS™

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

45A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

37.5W

Terminal Position :

Single

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Published :

2008

Max Dual Supply Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 50V

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.5V @ 75μA

Pin Count :

3

Case Connection :

Isolated

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant