IPA032N06N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 30V

Factory Lead Time :

13 Weeks

Continuous Drain Current (ID) :

84A

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

41W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Pins :

3

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 80A, 10V

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

60V

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

41W

Turn-Off Delay Time :

62 ns

Series :

OptiMOS™

ECCN Code :

EAR99

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Halogen Free :

Halogen Free

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 118µA

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Turn On Delay Time :

35 ns

Fall Time (Typ) :

20 ns

Rise Time :

120ns

FET Type :

N-Channel

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE