IPA032N06N3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

62 ns

Turn On Delay Time :

35 ns

FET Type :

N-Channel

Qualification Status :

Not Qualified

Fall Time (Typ) :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

60V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 80A, 10V

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V

Terminal Position :

Single

Rise Time :

120ns

Pbfree Code :

yes

Power Dissipation :

41W

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Continuous Drain Current (ID) :

84A

Vgs (Max) :

±20V

Series :

OptiMOS™

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation-Max :

41W Tc

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

13 Weeks

Mount :

Through Hole

JESD-609 Code :

e3

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 118µA

Pin Count :

3