IPA028N04NM3SXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

40 V

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

4V @ 95µA

Package / Case :

TO-220-3 Full Pack

Series :

OptiMOS?

Manufacturer :

Infineon

Package :

Tube

Transistor Type :

1 N-Channel

Power Dissipation (Max) :

38W (Tc)

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

9500 pF @ 20 V

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

120 nC @ 10 V

Maximum Operating Temperature :

+ 175 C

Subcategory :

MOSFETs

Brand :

Infineon Technologies

Operating Temperature :

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs :

2.8mOhm @ 89A, 10V

Rise Time :

7.8 ns

Current - Continuous Drain (Id) @ 25°C :

89A (Tc)

Qualification :

-

Mounting Style :

Through Hole

Continuous Drain Current Id :

89

Channel Type :

N Channel

Mounting Type :

Through Hole

Power Dissipation :

38

Product Type :

MOSFET

RoHS :

Details

Vgs (Max) :

±20V

Transistor Polarity :

N-Channel

FET Feature :

-

Packaging :

Tube

Supplier Device Package :

PG-TO220-FP