IPA040N06NXKSA1
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- Mfr.Part #
- IPA040N06NXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 69A TO220-FP
- Stock
- 10,753
- In Stock ：
- 10,753
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 276A
- Rise Time :
- 16ns
- Case Connection :
- Isolated
- Series :
- OptiMOS™
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~175°C TJ
- Max Dual Supply Voltage :
- 60V
- Number of Pins :
- 3
- Factory Lead Time :
- 13 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 69A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 77 mJ
- Published :
- 2012
- Power Dissipation-Max :
- 36W Tc
- Turn On Delay Time :
- 14 ns
- Turn-Off Delay Time :
- 33 ns
- Halogen Free :
- Halogen Free
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 3375pF @ 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 69A Tc
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3 Full Pack
- Continuous Drain Current (ID) :
- 69A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 8 ns
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 3.3V @ 50μA
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.004ohm
- FET Type :
- N-Channel
- Datasheets
- IPA040N06NXKSA1
N-Channel Tube 4m Ω @ 69A, 10V ±20V 3375pF @ 30V 44nC @ 10V TO-220-3 Full Pack
IPA040N06NXKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 77 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3375pF @ 30V.This device conducts a continuous drain current (ID) of 69A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 33 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 276A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 14 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 60V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).
IPA040N06NXKSA1 Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 69A
the turn-off delay time is 33 ns
based on its rated peak drain current 276A.
IPA040N06NXKSA1 Applications
There are a lot of Infineon Technologies
IPA040N06NXKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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