IPA083N10N5XKSA1
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- Mfr.Part #
- IPA083N10N5XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 44A TO220-FP
- Stock
- 1,029
- In Stock ：
- 1,029
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Max Dual Supply Voltage :
- 100V
- Turn On Delay Time :
- 15 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 8.3m Ω @ 44A, 10V
- Fall Time (Typ) :
- 5 ns
- Power Dissipation-Max :
- 36W Tc
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Lead Free :
- Lead Free
- Published :
- 2013
- Rise Time :
- 5ns
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 70 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 24 ns
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Input Capacitance (Ciss) (Max) @ Vds :
- 2730pF @ 50V
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Weight :
- 6.000006g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- OptiMOS™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 100V
- Continuous Drain Current (ID) :
- 44A
- Factory Lead Time :
- 13 Weeks
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3.8V @ 49μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Number of Channels :
- 1
- Drain-source On Resistance-Max :
- 0.0083Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- IPA083N10N5XKSA1
N-Channel Tube 8.3m Ω @ 44A, 10V ±20V 2730pF @ 50V 37nC @ 10V TO-220-3 Full Pack
IPA083N10N5XKSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 70 mJ.A device's maximal input capacitance is 2730pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 44A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 24 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 100V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (6V 10V).
IPA083N10N5XKSA1 Features
the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 24 ns
IPA083N10N5XKSA1 Applications
There are a lot of Infineon Technologies
IPA083N10N5XKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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