IPA075N15N3
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- Mfr.Part #
- IPA075N15N3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 491
- In Stock ：
- 491
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 7280pF @ 75V
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 43A, 10V
- Packaging :
- Tube
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 22 ns
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2008
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Power Dissipation-Max :
- 39W Tc
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 270μA
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Rise Time :
- 25ns
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 43A
- Factory Lead Time :
- 13 Weeks
- Max Dual Supply Voltage :
- 150V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 15 ns
- Pulsed Drain Current-Max (IDM) :
- 172A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-220-3 Full Pack
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 50 ns
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Halogen Free :
- Halogen Free
- Series :
- OptiMOS™
- Datasheets
- IPA075N15N3
N-Channel Tube 7.5m Ω @ 43A, 10V ±20V 7280pF @ 75V 93nC @ 10V TO-220-3 Full Pack
IPA075N15N3GXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1000 mJ.A device's maximum input capacitance is 7280pF @ 75V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 43A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 50 ns.Its maximum pulsed drain current is 172A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 150V, it supports maximum dual supply voltages.This device uses no drive voltage (8V 10V) to reduce its overall power consumption.
IPA075N15N3GXKSA1 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 43A
the turn-off delay time is 50 ns
based on its rated peak drain current 172A.
IPA075N15N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPA075N15N3GXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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