IPA060N06NXKSA1
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- Mfr.Part #
- IPA060N06NXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 45A TO220-FP
- Stock
- 21,162
- In Stock ：
- 21,162
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 3.3V @ 36μA
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 30V
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 7 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Turn-Off Delay Time :
- 20 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Continuous Drain Current (ID) :
- 45A
- Turn On Delay Time :
- 12 ns
- Published :
- 2012
- Series :
- OptiMOS™
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Factory Lead Time :
- 13 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Max Dual Supply Voltage :
- 60V
- Drain-source On Resistance-Max :
- 0.006Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 33W Tc
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 180A
- Mounting Type :
- Through Hole
- Case Connection :
- Isolated
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 45A, 10V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IPA060N06NXKSA1
IPA060N06NXKSA1 Documents
N-Channel Tube 6m Ω @ 45A, 10V ±20V 2500pF @ 30V 32nC @ 10V TO-220-3 Full Pack
IPA060N06NXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2500pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 60V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
IPA060N06NXKSA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 45A
the turn-off delay time is 20 ns
based on its rated peak drain current 180A.
IPA060N06NXKSA1 Applications
There are a lot of Infineon Technologies
IPA060N06NXKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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