IPA060N06NXKSA1
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- Mfr.Part #
- IPA060N06NXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 45A TO220-FP
- Stock
- 21,162
- In Stock ：
- 21,162
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 7 ns
- Continuous Drain Current (ID) :
- 45A
- Pulsed Drain Current-Max (IDM) :
- 180A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Factory Lead Time :
- 13 Weeks
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 45A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 20 ns
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 60 mJ
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Max Dual Supply Voltage :
- 60V
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 33W Tc
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.006Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 30V
- Turn On Delay Time :
- 12 ns
- Published :
- 2012
- Series :
- OptiMOS™
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Vgs(th) (Max) @ Id :
- 3.3V @ 36μA
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Datasheets
- IPA060N06NXKSA1
N-Channel Tube 6m Ω @ 45A, 10V ±20V 2500pF @ 30V 32nC @ 10V TO-220-3 Full Pack
IPA060N06NXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2500pF @ 30V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 20 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 60V.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
IPA060N06NXKSA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 45A
the turn-off delay time is 20 ns
based on its rated peak drain current 180A.
IPA060N06NXKSA1 Applications
There are a lot of Infineon Technologies
IPA060N06NXKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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