IPA057N08N3G
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- Mfr.Part #
- IPA057N08N3G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IPA057N08 - 12V-300V N-CHANNEL P
- Stock
- 4,833
- In Stock ：
- 4,833
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2013
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 39W
- Pin Count :
- 3
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 4750pF @ 40V
- Halogen Free :
- Halogen Free
- Rise Time :
- 42ns
- Case Connection :
- Isolated
- Series :
- OptiMOS™
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 10V
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Number of Terminations :
- 3
- Factory Lead Time :
- 13 Weeks
- Power Dissipation-Max :
- 39W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 90µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 36 ns
- Package / Case :
- TO-220-3 Full Pack
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Max Dual Supply Voltage :
- 80V
- Pulsed Drain Current-Max (IDM) :
- 240A
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 9 ns
- FET Type :
- N-Channel
- Turn On Delay Time :
- 17 ns
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 60A
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IPA057N08N3G
N-Channel Tube 5.7m Ω @ 60A, 10V ±20V 4750pF @ 40V 69nC @ 10V TO-220-3 Full Pack
IPA057N08N3GXKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4750pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 36 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 80V, it supports the maximal dual supply voltage.By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
IPA057N08N3GXKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 36 ns
based on its rated peak drain current 240A.
IPA057N08N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPA057N08N3GXKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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