IPA057N06N3GXKSA1
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- Mfr.Part #
- IPA057N06N3GXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 60A TO220-3-31
- Stock
- 21,801
- In Stock ：
- 21,801
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Fall Time (Typ) :
- 9 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 30V
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0057Ohm
- JEDEC-95 Code :
- TO-220AB
- Series :
- OptiMOS™
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Max Dual Supply Voltage :
- 60V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Published :
- 2008
- Package / Case :
- TO-220-3 Full Pack
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 60A
- Pulsed Drain Current-Max (IDM) :
- 240A
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 60A, 10V
- Factory Lead Time :
- 13 Weeks
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 24 ns
- Turn-Off Delay Time :
- 32 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 82nC @ 10V
- Power Dissipation-Max :
- 38W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 58μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 77 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 68ns
- Datasheets
- IPA057N06N3GXKSA1
N-Channel Tube 5.7m Ω @ 60A, 10V ±20V 6600pF @ 30V 82nC @ 10V TO-220-3 Full Pack
IPA057N06N3GXKSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 77 mJ.A device's maximal input capacitance is 6600pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 32 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 60V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPA057N06N3GXKSA1 Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 32 ns
based on its rated peak drain current 240A.
IPA057N06N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPA057N06N3GXKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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