IPA057N06N3G

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Mfr.Part #
IPA057N06N3G
Manufacturer
Infineon Technologies
Package / Case
Datasheet
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Description
IPA057N06 - 12V-300V N-CHANNEL P
Stock
11,553
In Stock :
11,553

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Pin Count :
3
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature (Max) :
175°C
Configuration :
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code :
TO-220AB
Terminal Finish :
Tin (Sn)
RoHS Status :
RoHS Compliant
Pbfree Code :
icon-pbfree yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min :
60V
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
77 mJ
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.0057Ohm
Drain Current-Max (Abs) (ID) :
60A
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
THROUGH-HOLE
Surface Mount :
No
Number of Terminals :
3
Qualification Status :
Not Qualified
JESD-609 Code :
e3
Reach Compliance Code :
Compliant
Number of Elements :
1
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
240A
JESD-30 Code :
R-PSFM-T3
Datasheets
IPA057N06N3G
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPA057N06N3G from Chip IC,where excellence meets affordability. This product stands out with its IPA057N06N3G pinout, IPA057N06N3G datasheet PDF, IPA057N06N3G amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPA057N06N3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.





IPA057N06N3 G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 77 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 60A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.

IPA057N06N3 G Features


the avalanche energy rating (Eas) is 77 mJ
based on its rated peak drain current 240A.


IPA057N06N3 G Applications


There are a lot of Infineon Technologies AG
IPA057N06N3 G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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