IPA057N06N3G
- Mfr.Part #
- IPA057N06N3G
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- IPA057N06 - 12V-300V N-CHANNEL P
- Stock
- 11,553
- In Stock :
- 11,553
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature (Max) :
- 175°C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-220AB
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- icon-pbfree yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- DS Breakdown Voltage-Min :
- 60V
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 77 mJ
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Drain Current-Max (Abs) (ID) :
- 60A
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Number of Terminals :
- 3
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 240A
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- IPA057N06N3G
IPA057N06N3 G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 77 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 60A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 240A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.
IPA057N06N3 G Features
the avalanche energy rating (Eas) is 77 mJ
based on its rated peak drain current 240A.
IPA057N06N3 G Applications
There are a lot of Infineon Technologies AG
IPA057N06N3 G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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