IMX8T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

120V

HTS Code :

8541.21.00.75

Published :

2005

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN (Dual)

Collector Base Voltage (VCBO) :

120V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

140MHz

Max Breakdown Voltage :

120V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Max Collector Current :

50mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mount :

Surface Mount

Number of Pins :

6

Base Part Number :

*MX8

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Elements :

2

Max Power Dissipation :

300mW

Transistor Application :

AMPLIFIER

Time@Peak Reflow Temperature-Max (s) :

10

Continuous Collector Current :

50mA

Collector Emitter Breakdown Voltage :

120V

Pin Count :

6

Emitter Base Voltage (VEBO) :

5V

Pbfree Code :

yes

Operating Temperature :

150°C TJ

JESD-609 Code :

e1

Package / Case :

SC-74, SOT-457

Lead Free :

Lead Free

Voltage - Rated DC :

120V

Element Configuration :

Dual

Terminal Form :

Gull wing

hFE Min :

180

Current - Collector Cutoff (Max) :

500nA ICBO

Transition Frequency :

140MHz

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA 6V

Current Rating :

50mA

ECCN Code :

EAR99