IMX8-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

120V

Element Configuration :

Dual

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Transition Frequency :

140MHz

Frequency :

140MHz

Package / Case :

SOT-23-6

Mounting Type :

Surface Mount

Radiation Hardening :

No

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

2 NPN (Dual)

Collector Emitter Breakdown Voltage :

120V

Height :

1.1mm

Factory Lead Time :

19 Weeks

Max Power Dissipation :

300mW

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Length :

3mm

Gain Bandwidth Product :

140MHz

Number of Pins :

6

Lead Free :

Lead Free

Voltage - Rated DC :

120V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Weight :

29.993795mg

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

50mA

Terminal Form :

Gull wing

Base Part Number :

IMX8

Collector Emitter Saturation Voltage :

500mV

Current - Collector Cutoff (Max) :

500nA ICBO

Terminal Finish :

Matte Tin (Sn)

Collector Base Voltage (VCBO) :

120V

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

hFE Min :

180

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Width :

1.6mm

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

120V

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA 6V

Max Collector Current :

50mA

Transistor Element Material :

SILICON

Polarity :

NPN

Pin Count :

6