IMX25T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

hFE Min :

820

Terminal Form :

Gull wing

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

20V

Number of Terminations :

6

Polarity :

NPN

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

25V

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

300mA

Transistor Type :

2 NPN (Dual)

Operating Temperature :

150°C TJ

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30mA

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Gain Bandwidth Product :

35MHz

Base Part Number :

IMX25

Factory Lead Time :

13 Weeks

Max Breakdown Voltage :

20V

Pin Count :

6

JESD-609 Code :

e1

Current - Collector Cutoff (Max) :

100nA ICBO

Max Collector Current :

300mA

Packaging :

Tape and Reel (TR)

Transition Frequency :

35MHz

Collector Emitter Breakdown Voltage :

20V

HTS Code :

8541.21.00.95

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

820 @ 4mA 2V

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Package / Case :

SC-74, SOT-457

Terminal Finish :

TIN SILVER COPPER

Pbfree Code :

yes

Number of Elements :

2

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

50mV

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Published :

2010