IMX25T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

100nA ICBO

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

20V

Pbfree Code :

yes

Max Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Transistor Type :

2 NPN (Dual)

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

300mW

Radiation Hardening :

No

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

10

Base Part Number :

IMX25

Number of Elements :

2

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pin Count :

6

Package / Case :

SC-74, SOT-457

Number of Pins :

6

Operating Temperature :

150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

820 @ 4mA 2V

Collector Emitter Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Published :

2010

Collector Emitter Saturation Voltage :

50mV

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

35MHz

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30mA

hFE Min :

820

Lead Free :

Lead Free

Factory Lead Time :

13 Weeks

Gain Bandwidth Product :

35MHz

Continuous Collector Current :

300mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

25V

HTS Code :

8541.21.00.95

Element Configuration :

Dual

Number of Terminations :

6

ECCN Code :

EAR99

Max Collector Current :

300mA

Collector Base Voltage (VCBO) :

50V