IMX25T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Saturation Voltage :

50mV

Max Breakdown Voltage :

20V

Gain Bandwidth Product :

35MHz

hFE Min :

820

Element Configuration :

Dual

Factory Lead Time :

13 Weeks

Pin Count :

6

Collector Base Voltage (VCBO) :

50V

Terminal Finish :

TIN SILVER COPPER

Max Collector Current :

300mA

Continuous Collector Current :

300mA

Radiation Hardening :

No

Transition Frequency :

35MHz

Operating Temperature :

150°C TJ

Published :

2010

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

20V

Emitter Base Voltage (VEBO) :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

820 @ 4mA 2V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Max Power Dissipation :

300mW

HTS Code :

8541.21.00.95

Package / Case :

SC-74, SOT-457

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100nA ICBO

Time@Peak Reflow Temperature-Max (s) :

10

Number of Pins :

6

Polarity :

NPN

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30mA

Mount :

Surface Mount

Transistor Type :

2 NPN (Dual)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Base Part Number :

IMX25

Number of Terminations :

6

JESD-609 Code :

e1

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Collector Emitter Breakdown Voltage :

20V

Lead Free :

Lead Free