IMX2T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

6

Package / Case :

SC-74, SOT-457

Published :

2004

Continuous Collector Current :

150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

Number of Elements :

2

Gain Bandwidth Product :

180MHz

VCEsat-Max :

0.4 V

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

HTS Code :

8541.21.00.75

Polarity :

NPN

Element Configuration :

Dual

JESD-609 Code :

e1

Number of Pins :

74

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Transistor Element Material :

SILICON

Voltage - Rated DC :

50V

Collector Emitter Breakdown Voltage :

50V

hFE Min :

120

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

50V

Pin Count :

6

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Transistor Application :

AMPLIFIER

Current Rating :

150mA

Transistor Type :

2 NPN (Dual)

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

180MHz

JESD-30 Code :

R-PDSO-G6

Collector Base Voltage (VCBO) :

60V

Mounting Type :

Surface Mount

Max Collector Current :

150mA

Radiation Hardening :

No

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Base Part Number :

*MX2

Emitter Base Voltage (VEBO) :

7V

Terminal Form :

Gull wing