IMX2T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

*MX2

Transition Frequency :

180MHz

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Continuous Collector Current :

150mA

Collector Base Voltage (VCBO) :

60V

VCEsat-Max :

0.4 V

Transistor Type :

2 NPN (Dual)

Pbfree Code :

yes

Package / Case :

SC-74, SOT-457

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Polarity :

NPN

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Emitter Base Voltage (VEBO) :

7V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Mount :

Surface Mount

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Max Collector Current :

150mA

ECCN Code :

EAR99

Number of Pins :

74

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Collector Emitter Breakdown Voltage :

50V

Current Rating :

150mA

Max Power Dissipation :

300mW

Published :

2004

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Current - Collector Cutoff (Max) :

100nA ICBO

hFE Min :

120

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Terminal Form :

Gull wing

Number of Elements :

2

JESD-30 Code :

R-PDSO-G6

Gain Bandwidth Product :

180MHz

Max Breakdown Voltage :

50V