IMT4T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Terminations :

6

Voltage - Rated DC :

-120V

Number of Pins :

6

Transistor Application :

AMPLIFIER

hFE Min :

180

JESD-609 Code :

e1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

140MHz

Max Breakdown Voltage :

120V

Collector Emitter Breakdown Voltage :

120V

VCEsat-Max :

0.5 V

Max Collector Current :

50mA

Power Dissipation :

300mW

Transition Frequency :

140MHz

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Terminal Form :

Gull wing

Base Part Number :

MT4

Factory Lead Time :

9 Weeks

Current - Collector Cutoff (Max) :

500nA ICBO

Package / Case :

SC-74, SOT-457

Collector Emitter Voltage (VCEO) :

500mV

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

-120V

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

-5V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Current Rating :

-50mA

Number of Elements :

2

Transistor Type :

2 PNP (Dual)

Element Configuration :

Dual

HTS Code :

8541.21.00.75

Terminal Finish :

TIN SILVER COPPER

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

10

Radiation Hardening :

No

Polarity :

PNP

Published :

2005

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA 6V

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Transistor Element Material :

SILICON